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Tantalum Tungsten (TaW) Sputtering Target

材料类型	TaW Target
元素符号	TaW
原子量	3N5
原子序数	As request
颜色/外形	Planar,Disc,Rotary etc
热导率	1-3week W/m.K
熔点	Support Customize (°C)
沸点	Support (°C)
热膨胀系数	Semiconductors, display panels, optics, solar energy, and functional coatings /K

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产品简介

Tantalum Tungsten (TaW) Sputtering Target Description:

Tantalum Tungsten (TaW) sputtering targets are high-performance binary alloy materials widely used for depositing high-temperature resistant, corrosion-resistant, and diffusion barrier thin films in advanced electronic, semiconductor, and industrial applications. With excellent thermal stability, high melting point, strong adhesion, low internal stress, and uniform film formation, TaW binary alloys are ideal for high-durability functional coatings and barrier layers.

Common ratio:

TaW 2.5/97.5, 5/95, 7.5/92.5, 10/90, 20/80, 50/50 (wt% or at%) —— among them, TaW 2.5/97.5 (Ta-2.5%W, corresponding to ASTM B364 R05252 standard) and TaW 10/90 (Ta-10%W, corresponding to ASTM B364 R05255 standard) are the most widely used ratios, which are also known as Tantaloy 63 and Tantaloy 60 respectively, widely applied in semiconductor, aerospace and chemical industrial sputtering applications. TaW 7.5/92.5 (Ta-7.5%W, Tantaloy 61) is also a common specification with high resilience modulus while maintaining excellent refractory properties.

Semiconductor & Microelectronics

Applied as diffusion barrier layers, electrode materials, and high-temperature stable metallization coatings in integrated circuits, wafers, and electronic packaging, effectively inhibiting interdiffusion and enhancing device reliability.

High-Temperature Protective Coatings

Widely used to deposit oxidation and corrosion-resistant layers for aerospace components, engine parts, and surface protection under extreme high-temperature environments.

Corrosion & Wear-Resistant Films

Suitable for fabricating high-hardness, wear-resistant, and chemically inert coatings in chemical equipment, precision machinery, and harsh working conditions.