产品列表
- 贵金属
- Iron & Iron Alloy Target
- 镍靶及镍合金溅射靶
- Copper & Copper Alloy Target
- Vanadium & Vanadium Alloy Target
- Titanium & Titanium Alloy Target
- Chromium & Chromium Alloy Target
- Aluminum & Aluminum Alloy Target
- Cobalt & Cobalt Alloy Target
- Tantalum & Tantalum Alloy Target
- Niobium & Niobium Alloy Target
- Tin & Tin Alloy Target
- Indium & Indium Alloy Target
- Evaporation Materials
- Ceramic Sputtering Targets
- Ceramic Evaporation Materials
Cobalt Iron Tantalum Boron (CoFeTaB) Sputtering Target
| 材料类型 | CoFeTaB Target |
|---|---|
| 元素符号 | CoFeTaB |
| 原子量 | 2N5 |
| 原子序数 | As request |
| 颜色/外形 | Planar |
| 热导率 | 1-3week W/m.K |
| 熔点 | Support Customize (°C) |
| 沸点 | Support (°C) |
| 热膨胀系数 | Semiconductors, display panels, optics, solar energy, and functional coatings /K |
产品简介
Cobalt Iron Tantalum Boron (CoFeTaB) Sputtering Target Description:
Cobalt-iron-tantalum-boron (CoFeTaB) is a quaternary alloy sputtering target that incorporates tantalum (Ta) into CoFeB.
This improvement addresses a key weakness of CoFeB—low resistivity leading to high-frequency losses—
making it a next-generation key material for 5G/6G communications and higher-density storage.
Common ratios: CoFeTaB 53/23/8/16 at% (customization available)
High purity (≥99.9%)
Ultra-high resistivity (>100 µΩ·cm)
Excellent amorphous state formation capability and thermal stability
Applications: On-chip RF inductors (core emerging applications)
Ultra-high density magnetic recording
Spintronic devices
Magnetic sensors
Fabrication process: Primarily employs vacuum arc melting or vacuum induction melting under inert gas protection,
followed by homogenization heat treatment to ensure high homogeneity of composition and microstructure.
Related Sputtering Targets
CoCr sputtering target
CoCrNi sputtering target
CoFeB sputtering target
CoCu sputtering target
