Nickel Vanadium (NiV) Sputtering Target Description :

Nickel-vanadium (NiV) alloy sputtering targets are crucial materials in integrated circuit manufacturing. 

Their core value lies in using a single alloy target to simultaneously function as both an adhesive layer and a barrier layer, 

thereby simplifying processes and improving device reliability.

Standard NiV alloys typically contain 5%–10% vanadium, with Ni-7V (93:7) being the most prevalent commercial formulation.

7wt% NiV planar targets: The most common type, either square or round, suitable for most sputtering equipment.

7wt% NiV rotating targets: Tubular structure, offering higher material utilization, suitable for large-area, 

continuous industrial production.

7wt% NiV custom-shaped targets: Shaped to meet specific equipment requirements.

The application of NiV targets is highly focused on high-tech fields with stringent precision and reliability requirements, 

with integrated circuits being the core application.

1. Integrated Circuits and Semiconductors (Core Applications)

2. Flat Panel Displays

3. Solar Thin-Film Batteries

4. Aerospace and High-End Industries

Common Ni:V = 93:7 (wt%) The most mainstream commercial ratio, offering the highest performance and process maturity.

Purity: 99.9% (3N) - 99.99% (4N) Semiconductor-grade applications typically require ≥99.95%.

Density: 8.0 - 8.9 g/cm³ Affects sputtering yield and film density.

Melting Point: Approximately 1350℃ Exhibits excellent high-temperature stability.

Magnetic Properties: Weakly magnetic/Non-magnetic One of the core advantages, solving the sputtering process instability 

problem caused by the ferromagnetism of pure nickel targets.

Grain Size: ≤ 150 μm Fine and uniform grain structure ensures uniformity and high sputtering rate of the sputtered film.

NiV7wt%-3N5-COA

Related Sputtering Targets

NiCu sputtering target